| 摘要 |
PURPOSE:To raise the capacity of interrupting a current by a method wherein an NPN transistor is formed in the same substrate as that of the GTO thyristor. CONSTITUTION:The NPN transistor composed of N1, P2, N3 layer is monolithically formed in the GTO thyristor substrate having P1, N1, P2, N2 layers and a buried gate layer P2<+>. The transistor unit is the N3-layer in which a collector electrode is made common with an anode electrode A of the GTO thyristor unit, the base being made the same as a P2-base layer and an emitter being formed in the manner similar to an N2-emitter of the GTO thyristor unit, and an emitter electrode E is made a turn-OFF gate electrode of the GTO thyristor unit. An N5-layer is formed so as to decrease ohmic resistances of the N1-layer and the anode electrode A. G1 is a turn- ON gate electrode of the GTO thyristor. Thereby, a turn-OFF gain is increased, and the maximum controllable current can be increased. |
