| 摘要 |
PURPOSE:To obtain the high sensitivity by a method wherein pellets of a polysemiconductor are hermetically sealed and heated together with a vaporable active impurity element. CONSTITUTION:An ampoule 3 is housed inside an electrical furnace F comprising a core tube 1 and a heater 2. A solution 5 which the pellets 4a, 4b, 4c... of InSb and Cd are dissolved in In is sealed inside the ampoule 3. A Cd-diffused layers are formed on the surfaces of the pellets 4a, 4b, 4c... by the heat treatment. After chemical etching treatments are applied to the pellets returned at normal temperatures to remove the Cd-diffused layer, the element is completed by making the element adhere to a supporting plate and forming electrodes. |
