发明名称 Composite function element and process for producing same.
摘要 <p>This invention relates to a composite function element characterized by forming a high resistance thin film layer containing the constitutional elements of perovskite type oxide and speicfied impurity elements at the grain boundary of a sintered product which is an agglomerate of n type semiconductor particles, and to a process for producing said composite function element. Said composite function element has such a composite function that it acts as a varistor passing high voltages at a high voltage and as a capcitor passing the currents of abnormal frequency zone at a low voltage, so that the functions of the two elements, a varistor and a capacitor, can be fulfilled simultaneously with only one element. Therefore, its extensive application to the usage of, for example, prevention of erroneous work in microcomputer-controlled instruments can be expected.</p>
申请公布号 EP0041379(A2) 申请公布日期 1981.12.09
申请号 EP19810302383 申请日期 1981.05.29
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ITAKURA, GEN;MATSUO, YOSHITIRO
分类号 H01G4/12;C04B35/475;H01C7/10;H01C7/108;H01G4/40;(IPC1-7):01C7/10;04B35/46;01G4/12 主分类号 H01G4/12
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