发明名称 |
Composite function element and process for producing same. |
摘要 |
<p>This invention relates to a composite function element characterized by forming a high resistance thin film layer containing the constitutional elements of perovskite type oxide and speicfied impurity elements at the grain boundary of a sintered product which is an agglomerate of n type semiconductor particles, and to a process for producing said composite function element. Said composite function element has such a composite function that it acts as a varistor passing high voltages at a high voltage and as a capcitor passing the currents of abnormal frequency zone at a low voltage, so that the functions of the two elements, a varistor and a capacitor, can be fulfilled simultaneously with only one element. Therefore, its extensive application to the usage of, for example, prevention of erroneous work in microcomputer-controlled instruments can be expected.</p> |
申请公布号 |
EP0041379(A2) |
申请公布日期 |
1981.12.09 |
申请号 |
EP19810302383 |
申请日期 |
1981.05.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ITAKURA, GEN;MATSUO, YOSHITIRO |
分类号 |
H01G4/12;C04B35/475;H01C7/10;H01C7/108;H01G4/40;(IPC1-7):01C7/10;04B35/46;01G4/12 |
主分类号 |
H01G4/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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