| 摘要 |
PURPOSE:To eliminate the nonlinear distortion, by giving a control to the bias of the FET forming an SEPP circuit in accordance with the current which flows through a transistor. CONSTITUTION:The input signal supplied to a terminal 1 is applied to the gates of FETs 3 and 4 that form an SEPP circuit. Transistors(TR) 30 and 32 forming a voltage detecting circuit detect the voltage drop at both the ends of resistors 7 and 8, and the currents of TRs 25a and 27a are controlled by the detection output. A control is given so that the currents of the TRs 25a and 27a increase with an increment of the current flowing through the FET4. As a result, the FETs 3 and 4 are never cut off to ensure a smooth connection between the upper and lower waveforms of the current flowing through a load 9. |
