发明名称 |
Single junction charge injector floating gate memory cell |
摘要 |
A single charge injector, floating gate memory cell wherein the injector diode is defined by an ion implanted region of opposite conductivity type from that of the semiconductor substrate and by a diffused region having the same conductivity type as but higher conductivity than the substrate. Equal hole and electron injection efficiencies can be obtained from this single charge injector. A three terminal access cell having a compact structure is obtained by use of a thick oxide read transistor located between the injector diode and the bootstrap capacitor. The read transistor together with a single address transistor for the cell are connected to the injector diode.
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申请公布号 |
US4305083(A) |
申请公布日期 |
1981.12.08 |
申请号 |
US19790073152 |
申请日期 |
1979.09.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
GUTIERREZ, JEAN M. |
分类号 |
G11C16/04;H01L29/788;(IPC1-7):H01L29/78;H01L27/02;H01L29/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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