| 摘要 |
A reference voltage generator comprising two MOS-type transistors T1' and T2' produced on the same substrate, the channels of these transistors having the respective lengths L1 and L2 and the respective widths Z1 and Z2, one of the transistors T2' having a channel, only one dimension of which is of the same order of magnitude as the corresponding dimension of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and this drain when the transistor is operating, the other dimension being large in relation to the corresponding dimension of said extension of the space charge zone, the other transistor T1' having a channel the two dimensions of which are large in relation to the corresponding dimensions of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and drain when the transistor is operating, and further comprising means for providing the difference in the threshold voltages of the transistors T1' and T2', this difference in threshold voltages representing the reference voltage.
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