| 摘要 |
PURPOSE:To accurately control the resistance value or the ratio of the resistance value and enable to change the characteristics of the circuit having the same function for subject resisting material by a method wherein the shape of a diffusion mask is partially changed in proportion to the resistance value within the prescribed diffused resistance formed region. CONSTITUTION:For instance, in order to obtain the circuit having a different gain in the amplifying circuit consisting of an arithmetic operational amplifier A, resistors Ri, Rf and Rg, the resisting material for which the resistance value of Rf is formed by having the same Ri, for example. The resisting material to be used for the circuit is formed by providing the diffusing region of a reverse conductive type in an isolated island, but the diffusing region is limited within the fixed range when the resistance value is to be changed and the patterning of the diffusion mask is performed by making a partial change on it. To be more precise, the length l1 section in a resistance layer, consisting of width w0 and length l0, for example, is changed to a narrower width w1, a diffusion layer is provided within the region of the length l0 in a Z-shape and the width w1 is changed (l1 is also changed). Through these procedures, the resistance material having a different resistance value and a resitance ratio can be controllably formed and also this can be applied to the circuit having different characteristics. |
