发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the generation of a soft error caused by alpha rays by a method wherein the first element having a contact region inside a bonding pad and the second element having a contact region on the circumferential section are faced each other and their contact regions are connected and coupled. CONSTITUTION:A contact region 4 consisting of copper plating is provided on the inside of the bonding pad 2 on the first element 1. After a contact region 7 has been provided on the circumferential section of the second element 6, a connecting material 8 consisting of a solder ball is formed on the contact region 7. Then, the first and the second elements are faced each other, are arranged in such manner that the contact region 4 and the connecting material 8 are coincided, a heat treatment is performed and then a welding and a coupling works are performed. After the composite element has been fusion welded on a supporting base 5, the element is connected to a package using a wire 3. Through these procedures, the circuit on the elements can be shielded using the substrate sections of both elements and the generation of the soft error caused by the alpha rays of an MOS dynamic memory can be prevented.
申请公布号 JPS56158467(A) 申请公布日期 1981.12.07
申请号 JP19800064310 申请日期 1980.05.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUBOUCHI NATSUO;ABE HARUHIKO;HARADA HIROJI
分类号 H01L27/00;H01L21/60;H01L21/822;H01L23/556;H01L27/04;H01L27/10 主分类号 H01L27/00
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