| 摘要 |
PURPOSE:To remove an oxide film generated naturally on an Al layer, to reduce decomposition of a photo sensing resin and to obtain a minute Al pattern in a short time when the electrode, wiring pattern of the semiconductor device is to be formed by a method wherein reducing gas is added in gas plasma when the Al layer is to be etched. CONSTITUTION:When the Al layer is to be etched, the composition ratio of gas to be used is made as CCl4:CO=85:15. The other condition is favorable as usual. By this constitution, CO in the gas plasma reacts on Al2O3 to perform reducing action, and etching by Cl ion and Al is advanced in succession. Because the rise time of etching is abridged to shorten the time on the whole, and the decomposition of the photo sensing resin is reduced by this reducing reaction, the minute pattern can be formed. |
