| 摘要 |
A photoelectric device have at least a signal electrode and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen. The amorphous photoconductor layer is disposed adjacent to the signal electrode. A thin layer is interposed between a signal electrode and a amorphous photoconductor layer. The thin layer is made of an inorganic material whose principal constituent is at least one of the following compounds; an oxide of at least one of the elements Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co; a nitride of at least one of the elements Ga, Si, Mg, Ta, Hf, Zr, Nb and B; or a halide of at least one of the elements Na, Mg, Li, Ba, Ca and K.
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