| 摘要 |
PURPOSE:To form a porous film in a manner to hold a heating part in a bridging state, by a method wherein a liquefied film-forming material is applied on a heating substance, structured in a bridging state, through the spin of a spinner. CONSTITUTION:After SiO2 layer 10 is formed on a surface of an Si wafer, the SiO2 layer is etched with an ammonia fluoride etching liquid, and the Si water 1 with silver glycol etching liquid to form a channel having an appropriate depth. Said channel is then etched with ethylenediamine water solution to form a cavity 2 and slits 10a and 10b, and SiO2 film bridge 10a is formed. A material, in which Pt and Pd are blended, is spattered on so formed substrate to form a conductive layer 13, and a heating part 13 is formed in a bridging state. On the heating substance structured in a bridging state, a liquefied substance, in which, for example, aluminum particles, water, and binder are mixed together, is applied with a spinner spun. Viscosity of a film-forming material and the number of revolutions of the spinner are adjusted thereupon, and a film thickness is regulated so that the bridging structure can be maintained. |
