RECEIVING DEVICE FOR MULTI-WAVELENGH LIGHT

摘要

PURPOSE:To enable the detection of numerous different wave length lights and contrive the small size by a method wherein light detecting cells are integrated in the same substrate. CONSTITUTION:A P<+> type (N<+> type) layer 9 of high impurity density which is changed in a junction depth (d) is formed on the surface of an N type (P type) semiconductor 8 of low impurity density by selective diffusion and selective epitaxial growth to obtain the light detection cell of a P<+>N(N<+>P) junction structure. The multi-wavelength light receiving device is constructed by further forming an isolation layer 10 and electrodes 11, 12. In this structure, an effective carrier generating region, that is, received light wavelength can be selected depending on the high impurity density layer thickness.