| 摘要 |
PURPOSE:To widen a luminescence wavelength region and radiate the light in uniform intensity by continuously changing a composition of an epitaxial growth layer of a compound semiconductor composed of at least three kinds of constituent elements. CONSTITUTION:An N type Ga1-xAlxAs layer 2 is epitaxially grown on an N type GaAs substrate 1 and a hole 3 in hemispherical surface-shape is formed in the layer 2. A P-N junction 4 is constructed in the hole 3 and the P-N junction 4 is made a luminous part (active layer). The Ga1-xAlxAs layer is a layer which the values of (x) clanges from 0.4 to 0.18 from the contact surface of the layer 2 with the GaAs substrate 1 toward the upper layer. Electrode layers 5, 6 are mounted on both sides 1, 2. |
