| 摘要 |
PURPOSE:To improve the degree of integration maintaining the property of high withstand voltage by a method wherein a low temperature oxide film and a high temperature oxide film are formed on the semiconductor substrate equipped with the electrode consisting of a polycrystalline Si or a metal silicide and a window to be used for diffusion is provided. CONSTITUTION:On the Si substrate 1 having a field oxide film 2, the gate electrode 5, consisting of the polycrystalline Si of high impurity density or metal silicide, is formed. A low temperature oxidation film 6 is formed by performing a low temperature wet oxidation at the temperature of 700-900 deg.C and then a high temperature oxidation film 7 is formed by performing a high temperature dry oxidation at the temperature of 1,000-1,200 deg.C. Then a window 8 is formed leaving said oxidation films on the surface of the electrode 5 and a diffusing region 9 is formed. Through these procedures, the degree of integration can be improved by giving a high density to the element maintaining a small coupling capacity and a high withstand voltage. |
