| 摘要 |
PURPOSE:To facilitate the test of the semiconductor wafer by a method wherein when an epitaxial active layer on the semiconductor wafer is to be etched, the prearranged area part of the active layer is also etched simultaneously to form a Schottky electrode, and the impurity atom concentration distribution at the interface of the active layer is measured. CONSTITUTION:The electric characteristic of an epitaxial layer consisting of a buffer layer 2, the active layer 3 having respectively different concentration and being formed on a semi-insulating substrate 1 is estimated using a step etch pattern A, a leak check pattern B and an FET pattern C. A Schottky barrier gate 16 in the FET pattern C is formed by recessing the active layer 3 and evaporating the Schottky metal, and in the recessing process of the active layer, a circular groove to form by evaporation the Schottky barrier electrode 17 of the pattern A therein is formed simultaneously. Accordingly the atom concentration distribution at the interface of the active layer and the buffer layer in the epitaxial layer can be obtained easily. |
