| 摘要 |
PURPOSE:To easily make overlays of fine patterns by forming an insulation-characteristic protecting film on a magnetic film, and subjecting this film to prescribed processing such as dry etching via photosensitive org. resist by the thickness of the conductive pattern film. CONSTITUTION:An insulation-characteristic protecting film 2 by SiO2 is provided by sputtering on a magnetic film 1, and patterns reverse from conductive patterns are formed by org. resist 3 on the film 2. Thence, with the resist 3 as a mask, the film 2 is dry-etching by the thickness of the conductor pattern film by a plasma etching device. Further, Al-Cu4 which is a conductor material is formed in the etched parts by vacuum deposition; at the same time, the resist 3 is removed together with the formed Al-Cu4. An insulation material 5 of SiO2 is then sputtered on the film 2 and the Al-Cu4, and transfer patterns are formed with permalloy 6 on this. These are coated with a passivation film. Thereby, overlays are made easily by the same number of steps as that for nonplanar type elements. |
