| 摘要 |
PURPOSE:To obtain an even layer by forming a CdSeO3 layer through two processes. CONSTITUTION:A glass base plate 1 coated with a transparent conductive film 2 is put in an atmosphere consisting of N, argon and oxygen to make CdSe to be sublimated and evaporated, thereby a CdSe layer 3 being formed on the film 2. The CdSe layer 3, next, is subjected to heat treatment to make it to be sintered and activated, before it is cooled rapidly, thereby a thick CdSeO3 layer 4 being formed. The CdSeO3 layer 4 undergoes heat treatment in an Se steam atmosphere to be formed into a given thickness. Following that, an As2S3 layer (or an As2Se3 layer) 5 is formed on the CdSeO3 layer 4 by a usual method, thus a target being completed. |
