| 摘要 |
PURPOSE:To unify a formation film thickness by a method wherein intervals between the wafers arranged vertically in a tubular furnace are extended longer as approaching nearer the exhaustion side of reaction gas, in a reaction apparatus in which the film is formed on the wafer surface by a heat treatment in the tubular furnace. CONSTITUTION:The processes of forming the films by impurity diffusions or gaseous phase growths are practiced on the surfaces of the semiconductor wafers by housing the large number of the wafers in the tubular furnace and by heat-treating them with reaction gas remaining flowed in the furnace. The wafers 7a-7z to be housed are vertically lined up by inserting the wafers ends in grooves 11a-11z formed in a jig 6a and arranged in the tubular furnace in order that the wafer surfaces are turned vertical to the direction of the reaction gas flow. The intervals (pitches) 12a-12z of the grooves formed in the jig 6a are not made same but gradually extended toward one direction as 12a<12b...<12z, and the grooves are arranged in such that the intervals nearer the downstream side of the reaction gas are made larger. Thereby, a reaction condition of the each wafer is nearly equalized and the fluctuation of the formation film thickness can be reduced. |
