| 摘要 |
PURPOSE:To obtain a stable insulating gate FET which is hard to be polluted by dirt by connecting the same conductive type of semiconductor wires to a source and a drain wherein a semiconductor layer adjoining the sides of the wires is oxidized to compose an insulating layer. CONSTITUTION:A P type source 2 and a drain 3 are provided on an N type Si substrate 1 and they covered with SiO2 4. Openings are selectively provided and P type Si 5 is overlaid on the SiO2 4 to selectively oxidize the P type Si 5 by applying Si3N4 masks 6 and the P type Si 5 is changed into SiO2 layers 10 to make a source electrode 7, a gate electrode 8, and a drain electrode 9. The SiO2 layer 10 is lightly etched, and the masks 6 are removed after forming the layer 10 and wiring paths 7-9 on the same surface. Then, the layer 10 and the wiring paths 7-9 are covered with SiO2 11. In this composition, the wirings 7-9 are buried in the SiO2 and the SiO2 treated by thermal oxidization is remarkably strong and fine as compared to the insulating film by other method. Therefore, a device excellent in stability and reliability can be obtained. |
