| 摘要 |
PURPOSE:To enable the repeated uses of a sliding member and reduce the cost by a method wherein a concave is formed on a support in which a substrate is buried and a crystallized material remained after the use is received, in an alloy semiconductor growing device by a sliding method. CONSTITUTION:The device by the sliding method is constructed by the support 11 buried with the substrates 3, 4 and the sliding member 12 perforated a through hole 5 in which the crystallized material is received, and made up by porous carbon. The concave 13 is formed on the top surface of the support 11. If, for example, HgCdTe is grown on a CdTe substrate, the sliding member 12 is slid and the liquid phase saturated on the dummy substrate 3 is contacted to the substrate for the growth, after the through hole 5 is filled up with HgTe and the device is raised in the temperature to liquefy the HgTe. The position of the through hole 5 is slid as far as the concave 13 with the crystallized material 6 remaining liquefied after the epitaxial growth, and the material remained after the use is cooled and hardened after being dropped into the concave 13. Thereby, the sliding member can repeatedly be used and economized because the crystallized material is not hardened. |
