发明名称 |
Optically testing the lateral dimensions of a pattern |
摘要 |
A method of optically testing the lateral dimensions of a pattern of material disposed on a substrate comprises applying the material to both the main area of the substrate and a test area on the same substrate, and selectively removing the material from both areas on the substrate simultaneously to form respectively the pattern on the main area and a diffraction grating on the test area. The diffraction grating is exposed to a beam of light, and the intensity of two of the diffracted beams is measured to obtain a ratio signal (I2/I1), which is then utilized to determine the lateral dimensional tolerance of the integrated circuit pattern.
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申请公布号 |
US4303341(A) |
申请公布日期 |
1981.12.01 |
申请号 |
US19790101166 |
申请日期 |
1979.12.07 |
申请人 |
RCA CORPORATION |
发明人 |
KLEINKNECHT, HANS P.;BOESENBERG, WOLFRAM A. |
分类号 |
G01B11/02;G03F7/20;(IPC1-7):G01N21/32 |
主分类号 |
G01B11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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