发明名称 |
Low temperature microwave annealing of semiconductor devices |
摘要 |
Briefly, and in general terms, the present invention provides a process for fabricating a semiconductor device, the device includes a semiconductor substrate having a major surface including an ion implanting region, wherein one fabrication step in the process subsequent to the formation of the ion implantation region is to direct a beam of microwave radiation at the device for annealing the ion implanted regions.
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申请公布号 |
US4303455(A) |
申请公布日期 |
1981.12.01 |
申请号 |
US19800130509 |
申请日期 |
1980.03.14 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
SPLINTER, MICHAEL R.;PALYS, RICHARD F.;BEGUWALA, MOIZ M. |
分类号 |
H01L21/265;H01L21/324;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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