INSULATED GATE FIELD EFFECT TYPE SEMICONDUCTOR DEVICE,申请号JP19800058070-传众专利搜索

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发明名称	INSULATED GATE FIELD EFFECT TYPE SEMICONDUCTOR DEVICE
摘要
申请公布号	JPS56155572(A)	申请公布日期	1981.12.01
申请号	JP19800058070	申请日期	1980.04.30
申请人	SANYO ELECTRIC CO;TOKYO SANYO ELECTRIC CO	发明人	NISHIDA OSANORI;AOYAMA MASASHIGE;ONODERA HIROSHI
分类号	H01L29/78;H01L29/08;H01L29/10	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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