| 摘要 |
A method of producing thin single-crystal sheets is disclosed. A thin single-crystal layer is formed on a substrate, with the material of the layer having a different absorption coefficient for laser radiation than does the material of the substrate at their interface. The laser radiation is focused into a region contiguous to the interface and extending the width of the interface, and is swept across the entire interface region. The energy that is absorbed from the laser radiation in the focus region liquifies material in this region. The layer is progressively separated from the substrate as the laser radiation is swept across the interface, until the entire layer is separated from the substrate. The method is applicable to the production of thin single-crystal sheets of semi-conductor material which may be used, for example, in the manufacture of solar cells or integrated circuits. <IMAGE> |
