| 摘要 |
<p>PURPOSE:To obtain a high withstand pressure for a can sealed type semiconductor device by connecting one end of a lead of the stem of the device to the electrode of a semiconductor pellet, and bending one external lead from the interior of an insulator externally in an arcuate shape when the other end is externally projected at a predetermined interval. CONSTITUTION:A thyristor pellet 7 is soldered to the base 5 of a stem used for a can sealed type semiconductor device. The positions of an anode lead 2, a cathode lead 3 and a gate lead 4 are determined at predetermined interval, and a part of the cathode lead 3 is bent beforehand from the interior of an insulator 1 to the exterior in an arcuate shape to increase the creeping distance l3 of the base 5 and the cathode 3. Thus, the creeping distance can be largely increased to endure against the high voltage and the device can be readily mounted on a printed substrate.</p> |
