| 摘要 |
<p>A read-only memory device comprising first and second memory cell areas 6-1 and 6-2 is disclosed. In the first memory cell 6-1 area, the presence or absence of a transistor represents the binary data "0" or"1 ", while, in the second memory cell 6-2 area, the presence or absence of a connection for connecting a transistor to one of bit lines BL0 to BL3 represents the binary data "0" or "1 ".</p> |
