| 摘要 |
PURPOSE:To contrive an increase in reverse current amplification factor by partially increasing the distance between the first semiconductor region becoming the injector of a horizontal type transistor and the second semiconductor region becoming a collector opposing to the injector in an I<2>L cell. CONSTITUTION:A projected section 9 is formed so that the width W1 of the base section in an inverse transistor opposing to an injector p type diffusion layer 4 may narrow than the width W2 of a base body 5. A base contact section 8 is formed at the projected section 9. The distance between the injector 4 and the inverse transistor is indicated by the distance l1 between the projected section 9 of the base 5 and the injector 4 and that l2 between the part except the projected section 9 and the injector, so that distance between the injector and the base partially increases. In this way, the minuteness of an I<2>L cell is obtained by reducing the return current to the injector and by increasing reverse current amplification factor. |
