| 摘要 |
A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material, e.g. GaAs over the surface of a first substrate of semiconductor material, e.g., also GaAs, forming source, drain and gate electrodes over the surface of the active layer, applying a second substrate of insulating material to the surface of this structure, and removing the first substrate. To facilitate the removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant may be formed between the first substrate and active layer, which buffer layer is removed, following removal of the first substrate, using a selective etchant to which the GaAs active layer is resistant. A second gate electrode may be formed on the active layer following removal of the first substrate. The technique is particularly applicable to high frequency FET devices. |
