| 摘要 |
Controlled power semiconductor component, having a disc-shaped silicon body with a surface on each side thereof, two insulated ductile electrodes each having surfaces on each side thereof, one of the surfaces of each of the ductile electrodes being in pressure contact with one of the surfaces of the silicon body, two pressure-contact discs each having an edge, and a surface on one side thereof in pressure contact with the other of the surfaces of the ductile electrodes, at least one control electrode connection disposed at a respective ductile electrode and contact disc on one of the sides of the silicon body, a bipartite annular cage divided along its diameter and having two polygonal recesses formed therein forming polygonal surfaces on the cage, and two inner flanges integral with the cage and bordering the recesses the flanges being disposed one above the other in axial direction of the silicon body, the polygonal surfaces on the cage formed by the recesses being tensionally connected to the edges of the contact discs.
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