| 摘要 |
PROBLEM TO BE SOLVED: To enhance machining accuracy and production efficiency of a semiconductor device. SOLUTION: A semiconductor laser comprises a lower clad layer 3, an active layer 4, an upper clad layer 5, a contact layer 9, and an insulation film 6 formed on the upper surface of a semiconductor substrate 2. The upper clad layer 5, the contact layer 9, and the insulation film 6 are subjected to etching to form a ridge 12. Furthermore, a negative electrode 1 is formed on the lower surface of the semiconductor substrate 2 and a conductor layer 7 is formed on the upper surface of a multilayer film substrate 31. The conductor layer 7 has a thickness of at least 150 nm on the side face of the ridge 12 having a sandglass-like cross section.
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