| 摘要 |
PURPOSE:To prevent the semiconductor device from influence of humidity by a method wherein after a liquid glass layer containing the desired impurity is formed on a semiconductor substrate, a diffusion treatment process is performed in accordance with the lumping method. CONSTITUTION:An SiO2 film having the prescribed opening is formed on the surface of the P type Si substrate 1, and the liquid glass layer 3 containing the N type impurity is adhered on the substrate thereof. Then in a diffusion furnace regulated preliminary at the temperature lower than the diffusion temperature, the Si substrate 1 adhered with the glass layer 3 is inserted and is arranged to heat preliminary the substrate 1 and to remove the solvent in the glass layer 3. After then the temperature of furnace is made at the prescribed diffusion temperature to form the diffusion treatment of impurity from the glass layer 3 to the substrate 1. The impurity concentration of an N<+> type layer 4 obtained by this way is not affected by the storage method and the storage time after the formation of the glass layer 3. |
