发明名称 BOAT FOR HEAT TREATMENT OF SEMICONDUCTOR
摘要 PURPOSE:To enable to obtain an uniform crystallinity of wafers irrelevant to the position of the boat by a method wherein plural disks are provided at both ends in the longitudinal direction of the boat for heat treatment of the wafers. CONSTITUTION:The wafers are arranged being made to stand on the part 6 of the boat 7, the quartz disks 9, 9' having nearly the same diameter with the wafers are provided plural by plural at the both ends of the boat 7, and the boat 7 is inserted in a heat treatment oven 8. By providing the disks 9, 9' at the both ends of the boat 7 like this, the speed of radiation and absorption of heat of the wafers located on the neighborhood of the both ends of the boat 7 is mitigated, and accordingly the generation of crystal defect like slip, etc., can be suppressed.
申请公布号 JPS56150821(A) 申请公布日期 1981.11.21
申请号 JP19800054680 申请日期 1980.04.24
申请人 KYUSHU NIPPON ELECTRIC 发明人 YOSHINAGA JIYUNICHI
分类号 H01L21/31;H01L21/205;H01L21/22;H01L21/673 主分类号 H01L21/31
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