发明名称 IMPROVED PHOTOVOLTAIC DEVICE
摘要 This invention is a layered thin film semiconductor device comprising a first transparent layer; a thin, second transparent layer having a conductivity less than the first transparent layer; and n-type layer; and a p-type layer comprising one or more IIB and VIA elements. This invention is also a method for making such semiconductor device. The thin film semiconductor devices of this invention are useful for making photovoltaic devices.
申请公布号 WO02091483(A2) 申请公布日期 2002.11.14
申请号 WO2002US14325 申请日期 2002.05.06
申请人 BP CORPORATION NORTH AMERICA INC. 发明人 CUNNINGHAM, DANIEL, W.;RUBCICH, MARC, P.
分类号 H01L21/00;H01L29/22;H01L31/00;H01L31/0224;H01L31/073 主分类号 H01L21/00
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