发明名称 |
IMPROVED PHOTOVOLTAIC DEVICE |
摘要 |
This invention is a layered thin film semiconductor device comprising a first transparent layer; a thin, second transparent layer having a conductivity less than the first transparent layer; and n-type layer; and a p-type layer comprising one or more IIB and VIA elements. This invention is also a method for making such semiconductor device. The thin film semiconductor devices of this invention are useful for making photovoltaic devices. |
申请公布号 |
WO02091483(A2) |
申请公布日期 |
2002.11.14 |
申请号 |
WO2002US14325 |
申请日期 |
2002.05.06 |
申请人 |
BP CORPORATION NORTH AMERICA INC. |
发明人 |
CUNNINGHAM, DANIEL, W.;RUBCICH, MARC, P. |
分类号 |
H01L21/00;H01L29/22;H01L31/00;H01L31/0224;H01L31/073 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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