发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the moisture, infiltrated into the internal section through resin, attaching to the surface of a pad by a method wherein a polyimide resin film is formed on the nitriding film which has been formed on the surface of an element in such manner that at least the polyimide resin film is surrounding the pad. CONSTITUTION:An SiO2 film 17 is formed on the surface of a semiconductor element 10, and at the same time, an Al wiring is formed into a prescribed pattern on the film 17. A bonding pad 18 is formed at a section of said pattern. On the surface of the element which has been formed through said procedures, a phosphor glass film 19 and a nitriding film 20 are formed. These film 19 and 20 are formed on the entire surface of the element 10, but the films are removed at the pad 18 section and a wire 15 is bonded on the exposed surface. On the constitution above- mentioned, a polyimide resin 21 is formed. As a result, such an excellent adhesive property is obtained between a resin 16 and a film 21 that there exists no gap between them. Accordingly, the moisture infiltrated into the internal section through the resin 16 is not gathered in between the resin 16 and the film 21, and also in between the films 20 and 21.
申请公布号 JPS56150830(A) 申请公布日期 1981.11.21
申请号 JP19800054137 申请日期 1980.04.25
申请人 HITACHI LTD 发明人 TSURUMARU KAZUHIRO
分类号 H01L23/29;H01L21/31;H01L21/312;H01L23/31;H01L23/485 主分类号 H01L23/29
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