| 摘要 |
PURPOSE:To allow a semiconductor device to emit a light by forming a pocket for holes in a P type semiconductor layer and a pocket for electrons in an N type semiconductor layer, and flowing a forward current in the injection, thereby coupling the holes and the electrons. CONSTITUTION:When a current is flowed forwardly, barriers 34, 35 operating as energy band manner for the electrons and the holes are formed. The electrons and the holes stored beforehand in the barriers 34, 35 are stored in two pockets 36, 37 respectively formed in the region. Further, when the electrons and the holes thus stored are recombined, a light of the wavelength determined by the energy gap Eg is emitted. It can emit the light of not special wavelength but continuous light or white light by providing variously the Eg. |
