发明名称 PREPARATION OF METAL OXIDE FILM
摘要 PURPOSE:To eliminate the installation for heating a substrate when the spattering is carried out by heating a film of an alloy which is spattered onto the substrate in an inert gas containing oxygen. CONSTITUTION:For example, a target 4 comprising an alloy of Cd and Sn is fixed on a cathode 3. Subsequently, a substrate plate 8 of a transparent conductive film is fixed to a lower surface of an anode 2 and a pressure of a mixed gas of an oxygen gas and an inert gas (an argon gas) in a container 1 is maintained to about 3-10<-2> Torr. Next, D.C. voltage (2KV) is applied between the anode 2 and the cathode 3 and discharged and, when a shutter is opened, a film 9 is accumulated on the substrate plate 8. Said film 9 is taken out and, for example, heated to 300 deg.C for about 60min in the air. Subsequently, said head treatment is repeatedly carried out at about 400 deg.C for about 30min and a film with excellent physical properties is obtained.
申请公布号 JPS56150188(A) 申请公布日期 1981.11.20
申请号 JP19800050367 申请日期 1980.04.18
申请人 HITACHI LTD;MIYAKE SEIJI 发明人 MIYAKE SEIJI;MIYATA NAOYUKI
分类号 C23C14/06;C23C14/00;C23C14/08;C23C14/34;C23C14/58;H01L21/203 主分类号 C23C14/06
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