发明名称 |
Positive photoresist composition |
摘要 |
A positive photoresist composition which comprises (A) a resin having a group which decomposes by the action of an acid to increase solubility in an alkaline developing solution, and (B) a compound which generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom upon irradiation with an actinic ray or radiation.The positive photoresist composition of the present invention is improved in resolution and process allowance such as exposure margin and depth of focus in a lithographic technology using a light source having a short wavelength capable of conducting the ultra fine fabrication and a chemical amplification-type positive photoresist. Further, it exhibits the excellent performance when an electron beam is used as a light source for exposure.
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申请公布号 |
US6485883(B2) |
申请公布日期 |
2002.11.26 |
申请号 |
US20010769375 |
申请日期 |
2001.01.26 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
KODAMA KUNIHIKO;KANNA SHINICHI;AOAI TOSHIAKI |
分类号 |
G03F7/031;G03F7/004;G03F7/039;(IPC1-7):G03F7/039 |
主分类号 |
G03F7/031 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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