HIGH TEMPERATURE ANNEALING METHOD OF SPIN-COATED PCMO FOR RRAM APPLICATION TO FORM HIGH-CRYSTALLINE PCMO THIN FILM HAVING BIPOLAR ELECTRICAL PULSE SWITCHING CHARACTERISTICS

摘要

PURPOSE: A high temperature annealing method of a spin-coated PCMO(Pr1-xCaxMnO3) for RRAM(resistance random access memory) application is provided to form a high-crystalline PCMO thin film having bipolar electrical pulse switching characteristics by performing a high temperature annealing process on a spin-coated PCMO thin film for using RRAM application. CONSTITUTION: A substrate is prepared. A metal barrier layer is deposited on the substrate. A lower electrode is formed on the metal barrier layer. A PCMO layer is spin-coated on the lower electrode by using a PCMO precursor. The PCMO thin film is baked by at least one baking process. The first annealing process is performed on the PCMO thin film. The spin-coating process, the baking process and the first annealing process are repeated until the PCMO thin film has a desired thickness. The second annealing process is performed on the PCMO thin film to fabricate a PCMO thin film having a crystalline structure of Pr1-xCaxMnO3(0.2<=x<=0.5). An upper electrode is deposited and patterned. An RRAM device is completed.