发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To reduce power consumption without spoiling the reliability of a device owing to a parasitic thyristor, by dropping the output terminal potential of a driving bipolar type logic circuit through connecting the logic circuit and a COMS semiconductor together via a resistance. CONSTITUTION:When a signal for chip selection, address, data input, write-in, etc., is applied from logic input terminal 62 to bipolar logic circuit 66 of an active pull-up type output circuit driving CMOS semiconductor 34, input terminal 70 of semiconductor 34 connected to output terminal 66 via earth resistance 72 and series resistance 68 is driven at a high speed. Through this resistance 72, the potential at terminal 66 drops twice the forward voltage drop of a diode as compared with power terminal 60 of circuit 58 to enable small-current drive, and resistance 68 prevents the generation of negative linking from terminal 70 when terminal 66 is inverted to the low level, so that the parasitic thyristor in element 34 will be prevented from operating. Thus, the storage device whose power consumption is reduced without spoiling the reliability owing to the parasitic thyristor is obtained.
申请公布号 JPS56148787(A) 申请公布日期 1981.11.18
申请号 JP19800050471 申请日期 1980.04.18
申请人 HITACHI LTD 发明人 HIRAGOURI KAZUYOSHI
分类号 G11C11/414;G11C8/18;H03K19/00 主分类号 G11C11/414
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