| 摘要 |
PURPOSE:To produce low forward voltage over the entire current range of a Schottky barrier diode by forming a high impurity density semiconductor region on the surface region of a semiconductor substrate and forming a metallic conductor contacting in rectification manner with the semiconductor region. CONSTITUTION:A semiconductor substrate having a buried layer 4, an N type epitaxial layer 2 and an oxide film 3 on a P type substrate 1 is prepared. Then, a window is opened at the film 3, phosphorus ion is injected, and then oxidized. Thereafter, an insulating diffused region 5 is formed. The region thus injected with phosphorus ion becomes an N type diffused region 6 at this time. Subsequently, a guard ring 7 is formed simultaneously upon formation of the base of a bipolar IC, and a cathode electrode N<+> type region 8 is formed simultaneously upon formation of an emitter of the bipolar IC. An aluminum wire 9 is eventually formed. |
