SEMICONDUCTOR STORAGE SYSTEM

摘要

PURPOSE:To obtain a large capacity while reducing the power consumption by dividing a storage matrix into two and by selecting row lines of one storage matrix by a row decoder. CONSTITUTION:A memory cell matrix is divided into two memory cell matrixes 22 and 23 of LSI chips locating a high-specific-resistance polycrystalline silicon layer at the upper part of IGFET, which forms an ohmic contact by diffusion from a inpurity region of high conc. through directly contacting with the inpurity region of high concn. constituting IGFET. Desired row lines of one of two matrixes 22 and 23 are selected by row decoder 21. This constitution wherein those row lines are substantially shortened reduces the power consumption of the semiconductor system as compared with the constitution wherein the memory cell matrix is not divided, increasing the capacity of the memory cell matrix.