| 摘要 |
<p>PURPOSE:To increase the readout speed of a semiconductor memory by varying the response speed of a memory cell output according to the distance of a row decoder. CONSTITUTION:The sizes of transistors constituting cells 15110... etc. are varied according to the distances from row decoder 12 to prevent the output response speeds of storage cells 15110... from decreasing according to the distances from decoder 12. As a result, the response speeds of respective memory cells 15110 are nearly equal and the readout speed of the semiconductor memory is substantially increased. Further, the same effect is obtained by varying the sizes of transistors of sense amplifiers or information output circuits.</p> |
