| 摘要 |
PURPOSE:To reduce the irregularity of a pattern due to sidewise etching of a semiconductor device by simultaneously patterning two types of thin films by one photoetching. CONSTITUTION:An N type layer 21 having specific resistance of 1 - several tens OMEGAcm is grown on an N<+> type silicon substrate 20. The first film 22 containing impurity is formed on an N type layer 21, is selectively removed, and a film 23 is formed thereon. The second film 24 is formed on the film 23, selectively removed, and the first patterns 25, 26 formed on the films 23, 24 and the second pattern 26 formed on the film 24 are formed. Then, impurity is introduced to the layer 21 by thermal diffusion. |
