| 摘要 |
PURPOSE:To improve the high frequency characteristics of a semiconductor device by shielding the main electrode region connected to an output side and a control electrode layer connected to an input side, thereby reducing the feedback coupling capacity. CONSTITUTION:A polysilicon layer 8 connected to a source 2 extends underneath the gate electrode 7, and the part between the layer 8 and the electrode 7 is insulated by a vapor phase chemical growth (CVD) oxide film 9. It effectively shields the part between the electrode 7 and the drain 3 by the layer 8, thereby reducing the feedback coupling capacity. |
