| 摘要 |
PURPOSE:To improve the reliability of wiring a semiconductor device by forming an insulating film on a semiconductor substrate on which electrodes are formed, covering selectively a mask on the insulating film, burying organic material around the insulating film on the electrodes and then opening contacting holes. CONSTITUTION:A silicon oxide film 12 is formed on a semiconductor substrate 11, and an electrode wire 13 made of polycrystalline silicon film is formed thereon. A phosphorus-adding silicon oxide film 14 is accumulated thereon in the same thickness the wire 13 by a vapor phase growth. Subsequently, a resist film 15 is covered as a mask on the film 14 excluding the part becoming a contacting region. Thereafter, when a plasma etching is conducted after organic material such as polyimide or the like having low viscosity is covered on the entire surface, the organic material 19 is buried only in the recess between the films 15 and 14. Eventually, exposed silicon oxide film 14' is removed by ion etching, the organic material 19 and the resist film are molten, and then an aluminum wire 21 is formed by an ordinary method. Since the surface of the substrate is flat, the yield of the wiring is high. |
