| 摘要 |
PURPOSE:To obtain a high-integrated RAM, by depositing a mixture or compound of metals such as Ta, Ti, and the like which can be oxidized by a positive electrode and is hard to be dissolved, and Si, Ge, and the like, on an Si, Ge, or Ga-As substrate. CONSTITUTION:The compound or the mixture of Ta and Si is deposited on the substrate of Si and the like. Said oxide has a dielectric constant which is twice that of SiO2 even though it contains 60% or more Si. The oxide becomes a noncrystalline material when Si becomes 15% or more. With the increase in percentage of Si, the oxide becomes similar to poly Si. Therefore, the positive-electrode oxidation can be readily achieved and a metal oxide semiconductor with a desired shape can be obtained with good reproducibility being provided. 10% or more Si is effective in the practical uses. In this constitution, the compact and large-capacity RAM having excellent performance, which is suitable for LSI, can be manufactured with a high yield rate. |
