| 摘要 |
PURPOSE:To obtain the highly integrated device characterized by small leakage currents by providing a source and a drain which are extended to the side surface on an island shaped semiconductor layer on an insulating layer, contacting the parts of the source and the drain to the insulating layer, and forming a gate electrode on the island shaped layer via an insulating film. CONSTITUTION:An island shaped Si layer 2 is formed on the insulating layer 1. A gate region is masked by poly Si 7. As ions are implanted, and an N type source 5, a drain 6, and an As implanted layer 16 are formed. Then, thin Al film mask 17 is provided. After H<+> ion beams are irradiated, the Al mask 17 is removed. Heat treatment is performed, and the source and the drain are extended to the lower insulating film by quick diffusion. The gate insulating film and various electrodes are formed by a conventional method. The insulating layer can be an embedded insulating layer, sapphire, and the like. In this constitution, the leakage current between the source and drain is small, erroneous operation is not caused, and the high performance device can be obtained without reducing high integrating density. |
