| 摘要 |
PURPOSE:To reduce the effect of the defects resulting from ion implantation and decrease leakage current by injecting an impurity into an Si substrate having a (100) surface, and forming the boundary of a P-N junction so as to be approximately parallel or perpendiculer to (010) and (001) planes. CONSTITUTION:An oxide film is formed on a P type Si substrate 3 with the surface of (100) plane and coated with a mask of resist pattern, and an N type impurity (e.g., As) is injected through a mask opening to form an N type layer 15. The mask pattern to form said N type layer 15 is produced so that the direction of the mask pattern is parallel or perpendicular to the direction crossing the X-axis 4 or the Y-axis 5 determined when the (110) facet is defined as a reference plane 2, at an angle of 45 deg.. The boundary of the P-N junction thereby formed can be parallel or perpendicular to (010) and (001) planes, so that junction characteristics can be less affected by the crystal defects resulting from the ion implantation. In addition, thereby, the junction leakage current of an MOSFET, for example, can be decreased. |
