发明名称 |
CHEMICAL VAPOR DEPOSITION OF FILMS ON SILICON WAFERS |
摘要 |
A process for depositing films of uniform thickness on silicon wafers at a uniform deposition rate among all wafers processed at the same time. The wafers are vertically oriented and arranged in a spaced-apart mutually parallel fashion and are supported within a horizontally-oriented long quartz tube which is evacuated at one end by a vacuum pump. A heating element surrounding the tube heats the wafers supported within it. At least one type of reactant gas is introduced into the enclosure in a generally confined region below the wafers and between the wafer arrangement and a wall of the enclosure. The gas, which is directed upwards between adjacent wafers and dispersed across the entire surface of the wafers, chemically reacts to deposit a uniform film on the wafers. Unreacted and exhaust gases are evacuated from the enclosure by the vacuum pump in a horizontal direction of flow above the wafer arrangement. |
申请公布号 |
IE811017(L) |
申请公布日期 |
1981.11.16 |
申请号 |
IE19810001017 |
申请日期 |
1981.05.08 |
申请人 |
ADVANCED CRYSTAL SCIENCES INC. |
发明人 |
|
分类号 |
H01L21/205;C23C16/44;C23C16/455;C30B25/00;C30B25/10;C30B25/14;H01L21/31;(IPC1-7):C30B25/14 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|