| 摘要 |
1,260,618. Semi-conductor devices. SOC. GENERALE SEMICONDUTTORI S.p.A. SGS. 19 May, 1970 [9 Aug., 1969], No. 24140/70. Heading H1K. A thin layer 11 of weakly conducting material overlying an oxide layer 5 interconnects opposite sides of a planar PN junction 8, 9 which emerges at a surface of a semi-conductor body 4 below the oxide layer 5. The layer 11 provides a distributed electrostatic potential in the surface of the body 4, and improves the breakdown characteristic of the junction 8, 9. The body 4 may be of Si, the junction 8, 9 being formed by oxide-masked diffusion of B from vapour. The thickness of the weakly conducting layer 11 may vary as shown to control its resistance, or the same effect may be obtained by varying its surface configuration along its length. Discrete highly conductive areas (13a-13d), Figs. 4 and 5 (not shown), may be provided above or below the weakly conducting layer to modify the potential distribution induced in the semi-conductor. The invention is applicable to integrated circuits, diodes, transistors and thyristors. |
